Magnetic Tunnel Junction Reliability Assessment Under Process Variations and Activity Factors and Mitigation Techniques
Magnetic Tunnel Junction Reliability Assessment Under Process Variations and Activity Factors and Mitigation Techniques
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工艺变化和活动因素下的磁隧道结可靠性评估及缓解技术
DOI：
10.1166/jolpe.2018.1560
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发表时间：
2018
影响因子：
--
通讯作者：
Rathi, Nitin
中科院分区：
文献类型：
--
作者：
Iyengar, Anirudh S.;Ghosh, Swaroop;Rathi, Nitin
时间相关介电击穿（TDDB）是影响自旋传递扭矩存储器（stram）中磁隧道结（MTJs）可靠性的主要问题。我们提供了一个分解模型来捕获动态读/写活动因素下的MTJ寿命。我们还提出了静态和动态电流节流与电路和系统级技术相结合，以较小的性能损失为代价提高MTJ的可靠性。使用SPLASH基准测试的模拟表明，在进程变化下，最频繁访问的缓存集的MTJ可靠性提高了~ 1010x，动态节流的IPC损失为~ 1.3%，静态节流的IPC损失为~ 2%。
Time Dependent Dielectric Breakdown (TDDB) is a major concern for the reliability of magnetic tunnel junctions (MTJs) in Spin-Transfer Torque RAM (STTRAM). We provide a breakdown model to capture the MTJ lifetime under dynamic read/write activity factors. We also propose static and dynamic current throttling coupled with circuit and system level techniques to improve the MTJ reliability at the cost of small performance penalty. Simulations using SPLASH benchmarks demonstrate ∼1010× improvement in MTJ reliability of the most frequently accessed cache sets for a minor IPC loss of ∼1.3% for dynamic throttling and ∼2% for static throttling under process variations.