Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors
Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors
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DOI：
10.1063/1.4867521
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发表时间：
2014-03-07
影响因子：
3.2
通讯作者：
Someya, T.
中科院分区：
文献类型：
--
作者：
Hayashi, T.;Take, N.;Someya, T.
利用导纳测量方法研究了二苯基[2,3-b:2',3'-f]噻吩[3,2-b]有机场效应晶体管和金属绝缘体半导体电容器的载流子动力学特性。对导纳的实部（电导）分量和虚部（电容）分量进行了分析，两者具有互补关系。在实验研究不同接触几何形状器件的基础上，将电导光谱中的峰与电容光谱的斜率相对应，分为两组。高频峰值归因于载流子从顶部触点注入到触点下方的DNTT/绝缘子界面，而低频峰值归因于遍布整个界面的漂移电流。载流子扩散的模型计算很好地再现了低频峰。结果表明，通过拟合可以估计从堆积区到亚阈值区的场效应迁移率。(C) 2014 AIP出版有限责任公司
Frequency-dependent carrier dynamics in dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based organic field-effect transistors and metal-insulator-semiconductor capacitors were studied by using admittance measurements. Both the real (conductance) and imaginary (capacitance) components of admittance, which have a mutually complementary relationship, were analyzed in the same way. On the basis of an experimental study of devices with different contact geometries, peaks observed in the conductance spectra corresponding to slopes in the capacitance spectra were classified into two groups. The high-frequency peak was attributed to the carrier injection from the top contact to the DNTT/insulator interface just underneath the contact while the low-frequency peaks were attributed to the drift current spreading all over the interface. The model calculation of carrier diffusion reproduces the low-frequency peaks very well. It is shown that the field-effect mobility from the accumulation region to the subthreshold region can be estimated by the fitting. (C) 2014 AIP Publishing LLC.