2D analytical model for the study of NEM relay device scaling
2D analytical model for the study of NEM relay device scaling
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用于 NEM 继电器装置缩放研究的 2D 分析模型
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
H. Wong
中科院分区：
文献类型：
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作者：
Xiaoying Shen;S. Chong;Daesung Lee;R. Parsa;R. Howe;H. Wong
NEM 继电器是一类很有前景的器件，可以克服 CMOS 电路的电源危机。为了设计这些设备并预测它们的缩放特性，非常需要一个强调继电器操作的基本物理原理的分析模型。这项工作提出了一种新的二维分析模型，用于研究 NEM 继电器缩放。该模型保留了 NEM 继电器的物理见解，但又具有接近常用一维模型的简单性。通过引入比率 R(a) 来解释 1D 公式中的 2D 效应，与有限元模型相比，误差从 ∼25%（1D 模型）减少到 ∼3%（本工作）。除了基本的机械和电气特性外，该模型还考虑了 NEM 继电器设备运行中的表面力。讨论了器件尺寸缩小时表面力对工作电压的影响。
NEM relay is a promising class of device to overcome the power crisis of CMOS circuits. To design these devices and predict their scaling properties, an analytical model highlighting the fundamental physics of the relay operation is highly desired. This work presents a new 2D analytical model for the study of NEM relay scaling. The model retains the physical insights for NEM relays and yet has the simplicity close to the commonly used 1D model. The error as compared to a finite element model is reduced from ∼25% (1D model) to ∼3% (this work) by introducing a ratio R(a) to account for 2D effects in the 1D formulation. Besides the fundamental mechanical and electrical properties, the model also takes into account surface forces in the operation of NEM relay devices. The impact of surface forces on the operation voltage as devices are scaled down is discussed.