Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
复制标题
AlxGa 1-xNyP1-y 中 Ga 间隙缺陷的性质
DOI：
10.1103/physrevb.71.125209
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发表时间：
2005
影响因子：
3.7
通讯作者：
H. Yonezu
中科院分区：
文献类型：
--
作者：
N. Q. Thinh;I. Vorona;I. Buyanova;Weimin M. Chen;S. Limpijumnong;Shengbai Zhang;Y. G. Hong;H. Xin;C. Tu;A. Utsumi;Y. Furukawa;S. Moon;A. Wakahara;H. Yonezu
本文详细叙述了分子束外延(Al)GaNp合金中自生缺陷的光学检测磁共振(ODMR)研究的实验结果。这..。
A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. Th ...