Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy
Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy
复制标题
使用高分辨率 X 射线衍射和透射电子显微镜表征高 Sb 掺杂硅
DOI：
10.1063/1.357778
复制
发表时间：
1994
影响因子：
3.2
通讯作者：
G. V. Hansson
中科院分区：
文献类型：
--
作者：
H. Radamson;M. Sardela;L. Hultman;G. V. Hansson
二维倒易空间映射与高分辨率X射线衍射已被用于表征应变在生长和退火Sb掺杂Si。在310 °C的生长温度下通过分子束外延生长Sb浓度为1×1019-3×1021 cm-3的Si（100）层。高分辨率透射电子显微镜已被应用于确定外延生长的临界厚度，生长形态和缺陷结构。低温外延生长的临界厚度随着Sb浓度的增加而降低，从CSb的1000 A（CSb为1020 cm−3）降低到CSb的1025 A（CSb为1021 cm−3）。在无缺陷外延层之后是具有堆垛层错和最终非晶相的小平面的（100）取向层。生长态Si层中的应变随着Sb浓度CSb的增加而增加，直到1×1021 cm−3。浓度超过2×1020 cm−3时，热稳定性较差，导致Sb沉淀。由于在Si中掺杂Sb而获得的晶格膨胀为β=5.4×10−24 c..
Two‐dimensional reciprocal space mapping with high‐resolution x‐ray diffraction has been used to characterize the strain in as‐grown and annealed Sb‐doped Si. Si(100) layers with Sb concentrations 1×1019–3×1021 cm−3 were grown by molecular‐beam epitaxy at a growth temperature of 310 °C. High‐resolution transmission electron microscopy has been applied to determine the critical thickness for epitaxial growth, growth morphology, and defect structure. The critical thickness for low‐temperature epitaxial growth decreases with increasing Sb concentration from ∼1000 A for CSb≊2×1020 cm−3 to ∼25 A for CSb≊2×1021 cm−3. Following the defect‐free epitaxial layer was a (100)‐oriented layer with stacking faults and facets to the final amorphous phase. The strain in as‐grown Si layers increased with increasing Sb concentration CSb up to 1×1021 cm−3. The thermal stability for concentrations above 2×1020 cm−3 was poor, resulting in Sb precipitation. The lattice expansion obtained due to Sb‐doping in Si was β=5.4×10−24 c...