Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators
Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators
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DOI：
10.1364/oe.20.029164
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发表时间：
2012-12-31
期刊：
影响因子：
3.8
通讯作者：
Miller, David A. B.
中科院分区：
文献类型：
--
作者：
Edwards, Elizabeth H.;Audet, Ross M.;Miller, David A. B.
我们展示了用于自由空间光互连的垂直入射电吸收调制器。该器件通过在硅衬底上通过减压化学气相沉积生长的Ge/SiGe量子威尔斯阱中的量子限制斯塔克效应来工作。强的电吸收对比度使得能够使用使用膜转移工艺形成的中等Q不对称法布里-珀罗谐振腔，其允许在宽光学带宽上操作而无需热调谐。对于3 V和1.5 V驱动摆幅，消光比分别为3.4 dB和2.5 dB，插入损耗小于4.5 dB。对于60 μ m直径的设备，大信号调制在2 Gbps，并观察到3.5 GHz的3 dB调制带宽。这些器件显示出进一步小型化的高速、低能量操作的前景。(C)2012美国光学学会
We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 mu m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization. (C) 2012 Optical Society of America