Tunable anisotropic plasmon response of monolayer GeSe nanoribbon arrays
Tunable anisotropic plasmon response of monolayer GeSe nanoribbon arrays
复制标题
单层GeSe纳米带阵列的可调谐各向异性等离子体响应
DOI：
10.1039/d0nr02047h
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发表时间：
2020-08-28
期刊：
影响因子：
6.7
通讯作者：
Cheng, Xiang'ai
中科院分区：
文献类型：
--
作者：
He, Weibao;Chen, Haitao;Cheng, Xiang'ai
近年来，二维硒化锗（GeSe）材料由于其面内各向异性和在太阳能电池等光电领域的巨大应用潜力而引起了人们的广泛关注。然而，仍在寻求增强其与光的相互作用以实现实际应用的方法。在此，我们系统地数值研究了单层GeSe纳米阵列的局域等离子体激元响应，结果表明，在远红外范围内具有各向异性行为的局域表面等离子体激元可以被有效地激发，从而增强光与物质的相互作用.我们进一步证明了单层GeSe纳米带的等离子体激元响应可以通过纳米带的宽度、局部折射率、衬底厚度和载流子浓度进行有效的调节，指出了控制局域等离子体激元响应的方法。在有限厚度的衬底上的单层GeSe纳米带的情况下，已经提出了一个类似法布里-珀罗（FP-like）的定量模型来解释来自重叠的FP和等离子体激元模式的整体光谱响应，它与模拟结果吻合得很好。总之，我们首次深入研究了新型2D GeSe纳米带的等离子体激元响应，为新型偏振相关光电器件的潜在应用带来了机会。
Recently, emerging two-dimensional (2D) germanium selenide (GeSe) has drawn lots of attention due to its in-plane anisotropic properties and great potential for optoelectronic applications such as in solar cells. However, methods are still sought to enhance its interaction with light to enable practical applications. Herein, we numerically investigate the localized plasmon response of monolayer GeSe nanoribbon arrays systematically, and the results show that localized surface plasmon polaritons in the far-infrared range with anisotropic behavior can be efficiently excited to enhance the light-matter interaction. We further show that the plasmon response of monolayer GeSe nanoribbons could be tuned effectively through the nanoribbon width, local refractive index, substrate thickness and carrier concentration, pointing out the ways for controlling the localized plasmon response. In the case of monolayer GeSe nanoribbons on a substrate of finite thickness, a Fabry-Perot-like (FP-like) quantitative model has been proposed to explain the overall spectral response originating from overlapped FP and plasmon modes, and it matches well with the simulation results. All in all, we investigate the plasmon response of the novel 2D GeSe nanoribbons thoroughly for the first time, bringing opportunities for potential applications of novel polarization-dependent optoelectronic devices.