Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
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DOI：
10.1039/c3nr33734k
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发表时间：
2013-02
期刊：
影响因子：
6.7
通讯作者：
L. Zhu;Jia Sun;Guodong Wu;Hong Liang Zhang;Qing Wan
中科院分区：
文献类型：
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作者：
L. Zhu;Jia Sun;Guodong Wu;Hong Liang Zhang;Qing Wan
采用等离子体增强化学气相沉积技术在室温下制备了磷掺杂纳米颗粒SiO(2)薄膜，在相对湿度为70%的室温下测得其质子电导率约为5.6×10-4 S cm-1。在SiO(2)/铟-锌-氧化物(IZO)界面上的质子积累形成了大的双电层电容。具有两个面内栅极的薄膜晶体管(TFT)是在透明导电玻璃衬底上自组装的。大的EDL电容可以有效地调制电流通断比为>；10(7)的IZO通道。这种TFT在与浮动栅极耦合的栅极电平上计算双输入信号，类似于神经元MOS(VMOS)。并在神经元TFT上演示了逻辑。这种由P掺杂纳米颗粒SiO(2)选通的神经元TFT显示了对氧化物半导体电导的有效静电调制，这对于便携式化学-生物传感应用具有重要意义。
Phosphorus (P)-doped nanogranular SiO(2) films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10(-4) S cm(-1) is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO(2)/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >10(7). Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO(2) shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.