Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
复制标题
优化 AlGaN/GaN MIS-HEMT 低动态 RDS-ON 色散的源场板设计
DOI：
10.1002/pssa.201600601
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Decoutere
中科院分区：
文献类型：
--
作者：
N. Ronchi;B. Bakeroot;S. You;Jie Hu;S. Stoffels;S. Decoutere
仅提供摘要形式。采用脉冲I-V测量和TCAD模拟研究了源极场板对AlGaN/GaN MIS-HEMT动态导通电阻（RDS-ON）的影响。研究了几种场板的变化：从只有一个栅极场板的基本配置开始，到一个栅极场板和两个源极场板的配置。不同的场板长度也进行了测量和模拟。源场板通过产生不同强度和空间位置的峰来修改电场分布。发现这些峰的强度和位置与动态RDS-ON色散密切相关。因此，考虑这两个方面的源场板的正确设计对于改善器件的开关性能是必要的。
Summary form only given. Pulsed I-V measurements and TCAD simulations were used to study the effect of the source field-plate on the dynamic ON-resistance (RDS-ON) of AlGaN/GaN MIS-HEMTs. Several field-plate variations were studied: starting from a basic configuration with only a gate field-plate up to a configuration with one gate field-plate and two levels of source field-plate. Different field-plate lengths were also measured and simulated. The source field-plate modified the electric field profile by generating peaks of different intensity and spatial location. It is found that both intensity and position of these peaks are closely related to the dynamic RDS-ON dispersion. A correct design of the source field-plates that considers these two aspects is thus necessary to improve the switching performance of the device.
影响因子：
3.1
作者：
Uren, Michael J.;Moereke, Janina;Kuball, Martin
通讯作者：
Kuball, Martin