An extensive study of the influence of dopants on the ferroelectric properties of HfO2
An extensive study of the influence of dopants on the ferroelectric properties of HfO2
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DOI：
10.1039/c6tc04807b
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发表时间：
2017-01-14
影响因子：
6.4
通讯作者：
Boettger, U.
中科院分区：
文献类型：
--
作者：
Starschich, S.;Boettger, U.
研究了化学溶液沉积(CSD)法制备的氧化铟薄膜的铁电性能。在这项广泛的研究中，大量不同的掺杂剂(大小和价态)和掺杂浓度被用来在42 nm薄膜中诱导铁电性。使用相同的前驱体和制备条件，所有的掺杂都具有良好的可比性。特别是，掺杂剂的大小似乎对所产生的铁电性能有至关重要的影响。对于较小的掺杂剂，只观察到很小的铁电响应，而对于较大的掺杂剂，剩余极化显着增加。用掠入射X射线衍射仪(GI-X射线衍射仪)研究了不同掺杂浓度和不同掺杂尺寸下的晶相。当掺杂浓度达到最高时，样品的剩余极化以立方相为主。类似于第一次CSD对Y：HfO2的研究，这反映在一个显著的唤醒行为上，这归因于场循环过程中从立方到正交的相变。
The ferroelectric properties of hafnium oxide based thin films prepared by chemical solution deposition (CSD) are investigated. In this extensive study, a wealth of strongly different dopants (size and valence) and dopant concentrations is used to induce ferroelectricity in 42 nm thin films. Using the same precursors and preparation conditions for all dopants a good comparability is given. In particular, the dopant size appears to have a crucial impact on the resulting ferroelectric properties. For smaller dopants only a small ferroelectric response is observed whereas for larger dopants the remanent polarization is increased significantly. The crystal phase for varying dopant concentrations and dopant sizes is investigated by grazing incidence X-ray diffractions (GI-XRD). A dominating cubic phase is found for doping concentrations showing the highest remanent polarization. Similar to first CSD studies on Y: HfO2, this is reflected in a prominent wake-up behavior, which is attributed to a phase transition from cubic to orthorhombic during field cycling.