Hybrid Hall effect device
Hybrid Hall effect device
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DOI：
10.1063/1.119704
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发表时间：
1997-08
影响因子：
4
通讯作者：
Mark Johnson;B. R. Bennett;M. Yang;M. Miller;B. V. Shanabrook
中科院分区：
文献类型：
--
作者：
Mark Johnson;B. R. Bennett;M. Yang;M. Miller;B. V. Shanabrook
制备了一种新型的微结构铁磁薄膜和微米级霍尔十字的磁电子器件，并在室温下对其进行了表征。在薄膜半导体霍尔棒中，铁磁体边缘的磁条纹场产生霍尔电压。条纹场的符号，以及输出霍尔电压的符号，通过反转铁磁体的磁化来切换。这种新器件具有优异的输出特性和缩放特性，可以用作磁场传感器、非易失性存储单元或逻辑门。
A novel magnetoelectronic device incorporating a single microstructured ferromagnetic film and a micron scale Hall cross was fabricated and characterized at room temperature. Magnetic fringe fields from the edge of the ferromagnet generate a Hall voltage in a thin film semiconducting Hall bar. The sign of the fringe field, as well as the sign of the output Hall voltage, is switched by reversing the magnetization of the ferromagnet. This new device has excellent output characteristics and scaling properties, and may find application as a magnetic field sensor, nonvolatile storage cell, or logic gate.