Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces
Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces
复制标题
DOI：
10.1063/1.1771461
复制
发表时间：
2004-07-12
影响因子：
4
通讯作者：
Koinuma, H
中科院分区：
文献类型：
--
作者：
Ohnishi, T;Shibuya, K;Koinuma, H
我们已经研究了TiO2封端的SrTiO 3（100）表面的热稳定性得到缓冲HF蚀刻和广泛使用的氧化膜生长的衬底。原位同轴冲击碰撞离子散射光谱法用于测量温度高达1000摄氏度的终止原子层的组成，模拟了广泛的薄膜生长条件。未退火但HF蚀刻表面的TiO 2终止被发现在低至300degreesC的温度下开始塌陷，无论气氛如何，显示化学裂解表面的热不稳定性。在这里，我们介绍了一种替代方法来制备稳定的SrTiO 3表面，它保持了完美的TiO 2终止高达700 degreesC，理想的原子尖锐的氧化物异质界面的生长。(C)2004年，美国物理学会。
We have examined the thermal stability of TiO2-terminated SrTiO3(100) surfaces obtained by buffered HF etching and widely used as substrates for oxide film growth. In situ coaxial impact-collision ion scattering spectroscopy was used to measure the composition of the terminating atomic layer at temperatures up to 1000degreesC, simulating a broad range of thin-film growth conditions. The TiO2 termination of a nonannealed but HF-etched surface was found to start collapsing at temperatures as low as 300degreesC regardless of atmosphere, showing thermal instability of the chemically cleaved surface. Here, we introduce an alternative way to prepare a stabilized SrTiO3 surface, which maintains a perfect TiO2 termination up to 700degreesC, ideal for the growth of atomically sharp oxide heterointerfaces. (C) 2004 American Institute of Physics.