Formation mechanism of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymers with in-plane dipole alignment under low electric field from melt and its SPR based pyroelectric sensor
Formation mechanism of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymers with in-plane dipole alignment under low electric field from melt and its SPR based pyroelectric sensor
复制标题
熔体低电场下面内偶极排列铁电聚偏二氟乙烯-三氟乙烯共聚物的形成机理及其基于SPR的热释电传感器
DOI：
10.1016/j.polymer.2021.123904
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发表时间：
2021
期刊：
影响因子：
4.6
通讯作者：
Kenji Ishida
中科院分区：
文献类型：
--
作者：
Yohei Sutani;Yasuko Koshiba;Tatsuya Fukushima;Kenji Ishida
采用微间隙梳状电极（IDT结构）在低电场下对P（VDF/TrFE）薄膜进行了退火处理，研究了薄膜的结构和热释电性能。通过施加低电场（7.7 MV m-1）实现了P（VDF/TrFE）的面内偶极排列，并且在III相结构成核之后转变了具有面内偶极排列的I相晶体结构。尽管没有法布里-珀罗型红外吸收结构，P（VDF/TrFE）薄膜，这是连续受到低电场从熔点到准铁电相变温度，表现出大的热释电信号。电压灵敏度为242 V W-1，这比在Si衬底上配备有法布里-珀罗型红外吸收结构的夹层型传感器（72 V W-1）高得多。提高的灵敏度可以归因于抑制注入的电荷下施加的低电场和增强的红外吸收和红外热转换由于微间隙IDT结构上的表面等离子体共振。
P(VDF/TrFE) thin films were annealed under a low electric field using microgapped comb-like electrodes (IDT structure), and their structures and pyroelectric properties were investigated. In-plane dipole alignment of P(VDF/TrFE) was achieved by applying a low electric field (7.7 MV m−1), and the I phase crystal structure with in-plane dipole alignment was transformed following nucleation of the III phase structure. Despite the absence of a Fabry–Perot-type infrared absorption structure, the P(VDF/TrFE) thin films, which were continuously subjected to a low electric field from the melting point to para-ferroelectric phase transition temperature, exhibited a large pyroelectric signal. The voltage sensitivity was 242 V W−1, which is much higher than that of the sandwich type sensor equipped with a Fabry–Perot-type infrared absorption structure on Si substrates (72 V W−1). The improved sensitivity could be attributed to the suppression of the injected charges under the application of a low electric field and the enhancement of the infrared absorption and infrared-to-thermal conversion owing to the surface plasmon resonance on the microgapped IDT structure.