The effect of cadmium chloride treatment on close spaced sublimated cadmium telluride thin film solar cells

The effect of cadmium chloride treatment on close spaced sublimated cadmium telluride thin film solar cells
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DOI:
10.1109/pvsc-vol2.2012.6656778
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发表时间:
2012-06
期刊:
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2
影响因子:
--
通讯作者:
A. Abbas;G. West;J. Bowers;P. Isherwood;P. Kamiński;B. Maniscalco;P. Rowley;J. Walls;K. Barricklow;W. Sampath;K. Barth
A. Abbas;G. West;J. Bowers;P. Isherwood;P. Kamiński;B. Maniscalco;P. Rowley;J. Walls;K. Barricklow;W. Sampath;K. Barth
中科院分区:
其他
文献类型:
--
作者:
A. Abbas;G. West;J. Bowers;P. Isherwood;P. Kamiński;B. Maniscalco;P. Rowley;J. Walls;K. Barricklow;W. Sampath;K. Barth

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本研究的目的是应用先进的微观结构表征技术来研究氯化镉处理对通过近距离升华(CSS)沉积的碲化镉太阳能电池物理性能的影响,并将这些与电池性能联系起来。一系列的技术已被用来观察微结构的变化,以及氯化镉处理前后的化学变化。还进行了将器件性能与电池的微观结构特性联系起来的电气测量。透射电子显微镜(TEM)显示高密度的堆垛层错生长的CdTe样品。此外,已经观察到这些堆垛层错在氯化镉处理期间被去除。这些观察结果表明,氯的存在起着重要的作用,在去除这些缺陷,并随后生产的高效率薄膜CdTe太阳能电池。TEM元素分析表明,处理后在CdTe/CdS界面和晶界处均出现了富氯区。
The aim of this investigation is to apply advanced microstructural characterization techniques to study the effect of the cadmium chloride treatment on the physical properties of cadmium telluride solar cells deposited via close-spaced sublimation (CSS) and relate these to cell performance. A range of techniques have been used to observe the microstructural changes as well as the chemical changes before and after cadmium chloride treatment. Electrical measurements that link the device performance with the microstructural properties of the cells have also been undertaken. Transmission Electron Microscopy (TEM) has revealed high densities of stacking faults in the as-grown CdTe samples. Further, it has been observed that these stacking faults are removed during the cadmium chloride treatment. These observations show that the presence of chlorine plays an important role in the removal of these defects and the subsequent production of high efficiency thin film CdTe solar cells. Elemental analysis in the TEM indicates chlorine rich regions appearing at the CdTe/CdS interface as well as at grain boundaries after the treatment.