Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb
Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb
复制标题
非正常离子辐照 GaSb 中纳米多孔层的时间演化
DOI：
10.1063/1.4869658
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发表时间：
2014
影响因子：
3.2
通讯作者：
T. Som
中科院分区：
文献类型：
--
作者：
D. Datta;A. Kanjilal;S. Garg;P. Sahoo;D. Kanjilal;T. Som
用60 keV的Ar+离子以60°的倾斜入射角在室温下辐照GaSb，导致在与下面的衬底的界面处同时形成纳米多孔层和起伏。有趣的是，随着离子注量的增加，致密的纳米多孔层逐渐嵌入脊状结构下方（高达1 × 1017离子cm−2的注量），延伸形成连续层（注量≥4 × 1017离子cm−2）。系统的成分分析表明，在表面层的Ga 2 O3和Sb 2 O3的共存。结果进行了讨论离子诱导的缺陷积累和溅射原子在表面上的再沉积之间的竞争。
Room temperature irradiation of GaSb by 60 keV Ar+-ions at an oblique incidence of 60° leads to simultaneous formation of a nanoporous layer and undulations at the interface with the underlying substrate. Interestingly, with increasing ion fluence, a gradual embedding of the dense nanoporous layer takes place below ridge-like structures (up to the fluence of 1 × 1017 ions cm−2), which get extended to form a continuous layer (at fluences ≥4 × 1017 ions cm−2). Systematic compositional analyses reveal the co-existence of Ga2O3 and Sb2O3 in the surface layer. The results are discussed in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface.