Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants
Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants
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DOI：
10.1063/1.4907285
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发表时间：
2015-01-26
影响因子：
4
通讯作者：
Tsukagoshi, Kazuhito
中科院分区：
文献类型：
--
作者：
Mitoma, Nobuhiko;Aikawa, Shinya;Tsukagoshi, Kazuhito
报告了非晶氧化铟 (a-InOx) 薄膜晶体管 (TFT) 中氧空位抑制对掺杂剂种类的依赖性。在包含同等原子密度的Si和W掺杂剂的a-InOx TFT中，发现主体a-InOx基质中氧的吸收取决于掺杂剂氧化吉布斯自由能的差异。对于完全氧化的薄膜，含有小离子半径掺杂剂的 a-InOx TFT 中提取的沟道电导率较高。这可以通过电荷屏蔽效应引起的离子散射横截面积的减小来解释。 (C) 2015 AIP 出版有限责任公司。
The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si-and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects. (C) 2015 AIP Publishing LLC.