Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors
Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors
复制标题
用于宽带隙半导体高压封装的突出陶瓷基板
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
H. Morel
中科院分区：
文献类型：
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作者：
Hugo Reynes;C. Buttay;H. Morel
宽禁带半导体可实现高压(10千伏及以上)开关。因此，需要新的包装解决方案来为此类设备奠定基础。金属化陶瓷基板是一种众所周知的成熟技术，可用于3.3KV以下的电压，但它在较高电压下表现出一些弱点：由于其制造工艺，金属化的轮廓很尖锐，并在“三点区”(陶瓷、导体和封装材料相遇的地方)诱导电场增强，这可能导致局部放电(PD)，最终导致模块故障。在本文中，我们提出了一种新的衬底结构，将三重点移到电场较低的区域。在这种结构中，陶瓷被加工成突起，并在顶部焊接圆边金属化。描述了基于有限元的衬底设计，计算表明，1 mm厚的AlN层应足以承受10kV的电压。介绍了该基板的制作工艺。测试结果表明了该方案的优越性，局部放电起始电压提高了38%。
Wide bandgap semiconductors enable high voltage (10 kV and more) switches. As a consequence, new packaging solutions are required to prepare the ground for such devices. The metallized ceramic substrate is a well-known and established technology for voltages up to 3.3kV, but it exhibits some weaknesses at higher voltages: due to its manufacturing process, the profile of the metallization is sharp and induces a reinforcement of the electric field at the “triple point” area (where the ceramic, the conductor and the encapsulating material meet), which can lead to Partial Discharges (PD), eventually causing a failure of the module. In this paper, we present a new substrate structure, where the triple point is moved away to an area where the electric field is lower. In this structure, the ceramic is machined to form protrusions, and round-edge metallizations are brazed on top. The design of the substrate, based on finite-elements is described, and calculations show that a 1 mm-thick AlN layer should be sufficient to withstand 10 kV. The manufacturing process of this substrate is presented. The test results demonstrate the superiority of this new solution, with a partial discharge inception voltage increased by 38 %.
DOI：
10.1109/tdei.2010.5539704
发表时间：
2010-08
影响因子：
3.1
作者：
Ningyan Wang;I. Cotton;J. Robertson;S. Follmann;K. Evans;D. Newcombe
通讯作者：
Ningyan Wang;I. Cotton;J. Robertson;S. Follmann;K. Evans;D. Newcombe