Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis
Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis
复制标题
DOI：
10.1109/tmtt.2016.2549520
复制
发表时间：
2016-04
影响因子：
4.3
通讯作者：
Y. Karisan;C. Caglayan;G. Trichopoulos;K. Sertel
中科院分区：
文献类型：
--
作者：
Y. Karisan;C. Caglayan;G. Trichopoulos;K. Sertel
我们提出了一种宽带集总元件寄生等效电路，以准确捕获高电子迁移率晶体管（HEMTs）结构内部和周围环境中电磁（EM）相互作用的频率响应。包括一个新的互感项，以考虑设备电极之间的高频磁场耦合。还提出了一种分析方法，第一次，以提取栅极到漏极互感LMGD，它创建了一个不希望的电感反馈路径从输出到输入在毫米波长。基于建议的外部等效电路，我们提出了一种新的多步参数提取程序，利用直接解析提取和线性回归技术系统地确定寄生元件的值。所提出的提取算法的准确性和鲁棒性建立通过电磁仿真，测量和建议的等效电路的频率响应之间的全面比较高达和超过300 GHz的毫米波（mmW）波段。通过后续的电路分析，识别并优化了对微波性能最不利的关键寄生元件。设计准则提供了最佳的器件布局选择，以实现最高的频率性能。它表明，通过全波模拟为基础的参数研究，约20%的最大振荡频率的改善是通过优化器件栅极指数和单位指宽。
We present a broadband lumped-element parasitic equivalent circuit to accurately capture the frequency response of electromagnetic (EM) interactions inside the structure and surrounding environment of high electron-mobility transistors (HEMTs). A new mutual inductance term is included to account for the high-frequency magnetic field coupling between device electrodes. An analytical method is also proposed, for the first time, to extract the gate-to-drain mutual inductance LMGD, which creates an undesirable inductive feedback path from output to input at millimeter wavelengths. Based on the suggested extrinsic equivalent circuit, we propose a novel multistep parameter extraction procedure that utilizes direct analytic extraction and linear regression techniques systematically to determine the parasitic component values. The accuracy and robustness of the presented extraction algorithm are established via comprehensive comparisons between EM simulations, measurements, and frequency responses of the suggested equivalent circuits up to and beyond 300 GHz in the millimeter-wave (mmW) band. The key parasitic elements that are most detrimental to the microwave performance are identified and optimized through subsequent circuit analysis. Design guidelines are provided for optimum device layout selection to achieve the highest frequency performance. It is demonstrated through a full-wave simulation based parametric study that around 20% improvement in maximum oscillation frequency is achievable via optimization of device gate finger number and unit finger width.