Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy
Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy
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DOI：
10.1063/1.4792053
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发表时间：
2013-02
影响因子：
4
通讯作者：
Z. Liao;Zhigang Chen;Zhenyu Lu;Hong-yi Xu;Yanan Guo;Wen Sun;Zhi Zhang;Lei Yang;Pingping Chen-Pingpin
中科院分区：
文献类型：
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作者：
Z. Liao;Zhigang Chen;Zhenyu Lu;Hong-yi Xu;Yanan Guo;Wen Sun;Zhi Zhang;Lei Yang;Pingping Chen-Pingpin
用电子显微镜研究了在GaAs {111}B衬底上存在Au纳米颗粒时GaAs的生长行为。研究发现，退火过程中，Ga向Au纳米颗粒的表面扩散增强，导致GaAs在Au纳米颗粒下外延生长为{113}B小面三角金字塔，生长受热力学控制，而在常规GaAs生长过程中，生长动力学占主导地位，导致高温下三角金字塔变平，外延纳米线在相对较低的温度下生长。本研究提供了一个洞察Au纳米颗粒对GaAs生长的影响，这是理解半导体纳米线的形成机制的关键。
GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.