Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well
Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well
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DOI：
10.1103/physrevb.89.125401
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发表时间：
2014-03
影响因子：
3.7
通讯作者：
M. Zudov;O. Mironov;Q. Ebner;Peter D. Martin;Q. Shi;D. Leadley
中科院分区：
文献类型：
--
作者：
M. Zudov;O. Mironov;Q. Ebner;Peter D. Martin;Q. Shi;D. Leadley
微波诱导电阻振荡（MIRO）已经被广泛研究了十多年，但到目前为止，仍然是独特的GaAs/AlGaAs为基础的二维电子系统。在这里，我们报告的观察MIRO在2D空穴气体托管在Ge/SiGe量子阱。我们的研究结果证实了MIRO是一个普遍现象，并表明微波光阻可以用来探测Ge/SiGe量子威尔斯阱中二维空穴的能谱和相关效应。
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.