Studies on the relaxor behavior of sol-gel derived Ba(ZrxTi1−x)O3 (0.30≤x≤0.70) thin films
Studies on the relaxor behavior of sol-gel derived Ba(ZrxTi1−x)O3 (0.30≤x≤0.70) thin films
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DOI:
10.1007/978-0-387-38039-1_8
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发表时间:
2006
影响因子:
4.5
通讯作者:
A. Dixit;S. Majumder;R. Katiyar;A. Bhalla
中科院分区:
文献类型:
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作者:
A. Dixit;S. Majumder;R. Katiyar;A. Bhalla
We have studied the relaxor behavior of sol-gel derived Ba(ZrxTi1−x)O3(0.30≤x≤0.70) thin films. The plausible mechanism of the relaxor behavior has been analyzed from the dielectric data and micro-Raman spectra. Substitution of Zr+4for Ti+4in BaTiO3lattice reduces its long-range polarization order yielding a diffused paraelectric to ferroelectric phase transition. The solid solution system is visualized as a mixture of Ti+4rich polar region and Zr+4rich regions and with the increase in Zr contents the volume fraction of the polar regions are progressively reduced. At about 25.0 at% Zr contents the polar regions exhibit typical relaxor behavior. The degree of relaxation increases with Zr content and maximizes at 40.0 at% Zr doped film. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (Tf). Below Tf, a long range polarization ordering was ascertained from the polarization hysteresis measurement