Design for broadband on-chip isolator using stimulated Brillouin scattering in dispersion-engineered chalcogenide waveguides
Design for broadband on-chip isolator using stimulated Brillouin scattering in dispersion-engineered chalcogenide waveguides
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DOI：
10.1364/oe.20.021235
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发表时间：
2012-09-10
期刊：
影响因子：
3.8
通讯作者：
Eggleton, Benjamin J.
中科院分区：
文献类型：
--
作者：
Poulton, Christopher G.;Pant, Ravi;Eggleton, Benjamin J.
提出了一种在硫族化物（As2S3）脊形波导中实现片上隔离的方案，其中利用受激布里渊散射在多模波导中诱导非互易模式转换。该设计利用了埋在二氧化硅基质中的硫属化物肋作为光和声的波导的想法，并且还可以被设计为用于光波和声波的多模。增强的光声耦合允许在芯片级（cm长）器件（< 10 cm）内实现显著的隔离（> 20 dB）。我们还表明，该设备的带宽可以显着增加，通过调谐波导的色散，以匹配光模式之间的群速度：我们发现，20 dB的隔离可以扩展到25 nm的带宽。(C)2012美国光学学会
We propose a scheme for on-chip isolation in chalcogenide (As2S3) rib waveguides, in which Stimulated Brillouin Scattering is used to induce non-reciprocal mode conversion within a multi-moded waveguide. The design exploits the idea that a chalcogenide rib buried in a silica matrix acts as waveguide for both light and sound, and can also be designed to be multi-moded for both optical and acoustic waves. The enhanced opto-acoustic coupling allows significant isolation (> 20 dB) within a chip-scale (cm-long) device (< 10 cm). We also show that the bandwidth of this device can be dramatically increased by tuning the dispersion of the waveguide to match the group velocity between optical modes: we find that 20 dB isolation can be extended over a bandwidth of 25 nm. (C) 2012 Optical Society of America