Self-assembled growth of ordered GaAs nanostructures
Self-assembled growth of ordered GaAs nanostructures
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DOI：
10.1063/1.2338530
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发表时间：
2006-08
影响因子：
4
通讯作者：
A. Ohtake;N. Koguchi
中科院分区：
文献类型：
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作者：
A. Ohtake;N. Koguchi
作者利用InAs/GaAs(111)A界面上的失配位错网络，制备了有序的GaAs纳米岛阵列。Ga纳米岛最好形成在掩埋位错之间的压缩应变区域。通过向Ga岛提供As4助熔剂制备的GaAs纳米岛也显示出高度的有序性，而同时沉积Ga和As会导致无规成核。
The authors have fabricated an ordered array of GaAs nanoislands using the network of misfit dislocations at the InAs∕GaAs(111)A interface. Ga nanoislands are preferably formed at compressively strained regions between buried dislocations. GaAs nanoislands fabricated by supplying As4 flux to the Ga islands also show a high degree of ordering, while simultaneous deposition of Ga and As results in random nucleation of GaAs nanoislands.