Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates
Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates
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DOI：
10.1063/1.2715838
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发表时间：
2007-04
影响因子：
3.2
通讯作者：
Thang Nguyen;W. Varhue;M. Cross;R. Pino;E. Adams;M. Lavoie;Jaichan Lee
中科院分区：
文献类型：
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作者：
Thang Nguyen;W. Varhue;M. Cross;R. Pino;E. Adams;M. Lavoie;Jaichan Lee
本文描述了在Si(111)衬底上异质外延GaSb薄膜的结构演变和表征。生长过程使用了多种原子源的组合，包括Sb的射频溅射和Ga的热渗流。要形成晶态GaSb薄膜，首先需要在清洁的氢钝化的Si(111)衬底表面直接施加一层单层厚的Sb缓冲层。用高分辨X射线衍射仪、卢瑟福背散射仪、透射电子显微镜、二次离子质谱仪和原子力显微镜(AFM)对薄膜进行了表征。材料经过几个生长阶段后，用原子力显微镜拍摄图像，以确定晶体结构随厚度的变化。原子力显微镜对薄膜表面的分析表明，异质外延层的形成是通过Stranki-Krastanov生长机制实现的。这一结果与代表大尺寸薄膜的异质外延生长相一致。
This paper describes the structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. The growth process used a combination of atomic sources which included the rf sputtering of Sb and the thermal effusion of Ga. The formation of crystalline GaSb thin films required that initially a monolayer thick Sb buffer layer be applied directly to a clean H-passivated Si(111) substrate surface. The resulting film was characterized by high resolution x-ray diffraction, Rutherford backscattering spectrometry, transmission electron microscopy, secondary ion mass spectroscopy, and atomic force microscopy (AFM). The AFM images were taken from the material after several periods of growth to determine the evolution of crystal structure with thickness. Atomic force microscopy images of the film surface showed that the heteroepitaxial layers were formed via the Stranski-Krastanov growth mechanism. This result is consistent with the heteroepitaxial growth of systems representing large di...