Binding energy of Sb-related complex in p-doped ZnO film
Binding energy of Sb-related complex in p-doped ZnO film
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DOI：
10.1016/j.jallcom.2019.06.033
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发表时间：
2019-09
影响因子：
6.2
通讯作者：
Yi Cheng;Xizhen Zhang;Li Che;Jixiang Chen;Bo Jing;Rulin Sun;Xixian Luo
中科院分区：
文献类型：
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作者：
Yi Cheng;Xizhen Zhang;Li Che;Jixiang Chen;Bo Jing;Rulin Sun;Xixian Luo
采用金属有机化学气相沉积（MOCVD）方法在（001）蓝宝石衬底上生长了ZnO和Sb掺杂ZnO薄膜。二乙基锌（DEZn），三甲基锑（TMSb）和氧气分别用作锌，锑和氧源。探讨了DEZn与氧气的反应机理。解释了SbZn-2 VZn受体络合物的形成，讨论了Sb的化学状态对导电类型的影响。在Sb掺杂ZnO薄膜的低温光谱中，观察到与受主相关的发射，如受主束缚激子（3.319 eV）和自由电子与受主之间的跃迁（3.244 eV），这证明了SbZn-2 VZn受主络合物的产生。根据自由电子与受体之间的跃迁能级，计算出受体结合能为0.19 eV。同时，通过拟合积分光致发光强度与温度的函数关系，估算了受体结合能，与理论计算值吻合较好。
ZnO and Sb-doped ZnO films were grown on (001) sapphire using metal organic chemical vapor deposition (MOCVD). Diethylzinc (DEZn), trimethylantimony (TMSb) and oxygen were used as the Zn, Sb and oxygen sources, respectively. The reaction mechanism of DEZn and oxygen was investigated. The formation of the SbZn–2VZnacceptor complex is explained, and the effect of the Sb chemical state on the conduction type is discussed. In the low-temperature spectrum of the Sb-doped ZnO film, emissions associated with acceptors, such as the acceptor-bound exciton (3.319 eV) and the transition between free electrons and acceptors (3.244 eV), were observed, which proved the creation of the SbZn–2VZnacceptor complex. According to the energy level of the transition between the free electrons and acceptors, the acceptor binding energy was calculated to be 0.19 eV. Meanwhile, by fitting the integral photoluminescence intensity versus the temperature function, the acceptor binding energy was also estimated and was similar to the calculated value.