Influence of thickness on field emission characteristics of AlN thin films
Influence of thickness on field emission characteristics of AlN thin films
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DOI：
10.1016/j.apsusc.2004.09.111
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发表时间：
2005-04
影响因子：
6.7
通讯作者：
Yaru Wang;Yingai Li;W. Feng;Weimo Li;Chunhong Zhao;Lian-he Liu;Kecheng Feng;Yang Zhao
中科院分区：
文献类型：
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作者：
Yaru Wang;Yingai Li;W. Feng;Weimo Li;Chunhong Zhao;Lian-he Liu;Kecheng Feng;Yang Zhao
采用射频磁控反应溅射法，在Ar-N2混合气体中，在Si（100）衬底上制备了不同厚度（20- 150 nm）的氮化铝（AlN）薄膜。在超高真空系统中测量了AlN薄膜的场发射特性。它们显然取决于厚度。存在一个最佳膜厚，使AlN薄膜场发射性能最佳。在44 nm厚的AlN薄膜上，获得了10 V/μ m的开启电场和284μA/cm 2的最大发射电流密度。Fowler-Nordheim图表明电子通过AlN薄膜表面的势垒隧穿从AlN发射到真空中。
Aluminum nitride (AlN) thin films with various thicknesses (20–150nm) are prepared on substrate Si(100) by radio-frequency (rf) magnetic reactive sputtering in an Ar–N2gas mixture. The field emission characteristics of the AlN thin films are measured in an ultra-high vacuum system. They depend evidently on the thicknesses. There is an optimum film thickness for the best field emission characteristics of AlN thin films. A turn-on electric field of 10V/μm and the highest emission current density of 284μA/cm2at an electric field of 35V/μm are obtained for the about 44-nm-thick AlN film. The Fowler–Nordheim plots show that electrons are emitted from AlN to vacuum by tunneling through the potential barrier at the surface of AlN thin films.