Pulsed DC Power for Magnetron Sputtering: Strategies for Maximizing Quality and Flexibility
Pulsed DC Power for Magnetron Sputtering: Strategies for Maximizing Quality and Flexibility
复制标题
用于磁控溅射的脉冲直流电源：最大限度提高质量和灵活性的策略
DOI：
10.14332/svc14.proc.1820
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发表时间：
2015
影响因子：
4
通讯作者：
B. Fries
中科院分区：
文献类型：
--
作者：
D. Pelleymounter;D. Christie;B. Fries
脉冲直流电源广泛用于反应磁控溅射，特别是介电化合物。它的引入是变革性的，能够实现电介质的反应溅射，而这在直流电中基本上是不可能实现的。这是通过定期对反应沉积在目标上的介电薄膜上的电压进行放电来实现的，实际上防止了电弧的发生。至少自 20 世纪 70 年代以来，在专利申请中提出了用于防止反应溅射期间靶材电弧的电压反转概念。进一步的发展表明脉冲实施在工业上是可行的。不对称脉冲是一个关键概念，其反转足够大以使靶表面放电，但又足够小以防止室表面和阳极的溅射。这一发展的一个重要方面是使用电压反转作为处理确实发生的少数电弧的有效方法，因为它可以快速消除电缆系统中存储的能量，而与电缆长度无关。现在，随着对以最少缺陷高质量沉积的各种薄膜的需求不断增加，需要增强对多个脉冲电源的控制和同步。本文涵盖了提供更高功率和更多控制以满足当前和未来需求的策略。
Pulsed DC power is widely used for reactive magnetron sputtering, particularly for dielectric compounds. Its introduction was transformational, enabling reactive sputtering of dielectrics that were essentially impossible with straight DC. This was accomplished by periodically discharging the voltage on dielectric films reactively deposited on the target, actually preventing the occurrence of arcs. The concept of voltage reversal to prevent target arcs during reactive sputtering has been known since at least the 1970s, when it was presented in a patent application. Further development showed that a pulsed implementation could be industrially practical. Asymmetric pulsing was a key concept, with a reversal large enough to discharge the target surface, but small enough to prevent sputtering of the chamber surfaces and anodes. An important aspect of this development was the use of voltage reversal as an effective way to handle the few arcs that did occur, since it rapidly removed the energy stored in the cable system, independent of its length. Now, with continuously increasing demands for diverse films deposited at high quality with minimum defects, increased control and synchronization of multiple pulsed supplies is required. This paper covers strategies for delivering higher power and more control to meet current and future requirements.