Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
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DOI：
10.1088/0268-1242/23/7/075019
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发表时间：
2008-05
影响因子：
1.9
通讯作者：
N. Xu;L. Liu;X. Sun;C. Chen;Y. Wang;D. Han;X. Liu;R. Han;J. Kang;B. Yu
中科院分区：
文献类型：
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作者：
N. Xu;L. Liu;X. Sun;C. Chen;Y. Wang;D. Han;X. Liu;R. Han;J. Kang;B. Yu
首次证实了TiN/ZnO/Pt器件的高稳定双极阻变特性。该器件具有开关速度快（置位<20 ns，复位<60 ns）、保持时间长（约105 s）、无需电铸等优良的存储特性。双极开关行为可以用氧空位组成的导电通路的形成和断裂来解释。这种优异的双极开关特性可归因于ZnO薄膜中大量的氧空位和TiN层作为氧库的作用。
Highly stable bipolar resistive switching behaviors of TiN/ZnO/Pt devices were demonstrated for the first time. The excellent memory characteristics including fast switching speed (<20 ns for set and <60 ns for reset), long retention (in the order of 105 s) and non-electroforming process were demonstrated. The bipolar switching behaviors can be explained by formation and rupture of the filamentary conductive path consisting of oxygen vacancies. The excellent bipolar switching behavior can be attributed to the significant amount of oxygen vacancies in ZnO film and the effect of TiN layer serving as an oxygen reservoir.