A 2.4 GHz-Band Enhancement-Mode GaAs HEMT Rectifier with 19% RF-to-DC Efficiency for 1 μW Input Power
A 2.4 GHz-Band Enhancement-Mode GaAs HEMT Rectifier with 19% RF-to-DC Efficiency for 1 μW Input Power
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2.4 GHz 频段增强型 GaAs HEMT 整流器，在 1 μW 输入功率下具有 19% 的射频至直流效率
DOI：
10.23919/eumc.2019.8910844
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
K. Honjo
中科院分区：
文献类型：
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作者：
R. Ishikawa;Tsuyoshi Yoshida;K. Honjo
在2.4GHz频段，采用增强型GaAs pHEMT整流器，输入功率为1 μW时，射频-直流转换效率达到19%。增强型GaAs HEMT具有栅-漏反馈电容适中、非线性强、寄生电阻大等优点，适合于整流工作。栅极-漏极电容为极低输入功率产生足够的栅极开关信号。此外，电路损耗必须尽可能降低，尤其是门极侧电路要保持门极开关信号。
An RF-to-DC conversion efficiency of 19% has been achieved for a 1-μW input power at the 2.4-GHz band by using an enhancement-mode GaAs pHEMT rectifier. The enhancement-mode GaAs HEMT was suitable for the rectifier operation due to its moderate gate-drain feedback capacitance, a strong nonlinearity, and a large transconductance. The gate-drain capacitance generates a sufficient gate-switching signal for a very low input power. In addition, the circuit loss must be reduced to as low as possible, especially for the gate-side circuit to keep the gate switching signal.