Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage
Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage
复制标题
FinFET SEU 横截面在电源电压范围内的经验建模
DOI：
10.1109/tns.2019.2920621
复制
发表时间：
2019
影响因子：
1.8
通讯作者：
L. Massengill
中科院分区：
文献类型：
--
作者：
R. C. Harrington;J. Kauppila;J. Maharrey;T. Haeffner;A. Sternberg;E. Zhang;D. Ball;P. Nsengiyumva;B. Bhuva;L. Massengill
在14-/16-nm FinFET技术节点上，获得了D触发器（DFF）在宽的粒子线性能量转移（LET）范围内随电源电压变化的实验重离子单粒子翻转（SEU）截面.根据实验数据建立了预测单粒子翻转截面随电源电压变化的经验模型，并进行了验证。结果是一致的低LET粒子辐照的研究结果，从以前的作品，已表明一个强大的指数增加单粒子翻转截面与FinFET技术的电源电压缩放。此外，本文揭示了电源电压的变化对高LET粒子辐照敏感区域的影响。从标称（0.8 V）到特定的高LET粒子辐照的降低电源电压的横截面的增加是恒定的，并且已经通过跨高LET粒子光谱的实验结果观察到。3-D TCAD模拟用于表征FinFET技术中影响高LET电源电压依赖性SEU截面的敏感区域。开发的模型将允许电路设计人员预测由于14-/16 nm技术节点的电源电压变化而导致的SEU横截面的变化，而无需进行广泛的测试。
At the 14-/16-nm FinFET technology node, experimental heavy-ion single-event upset (SEU) cross sections have been obtained for a D flip-flop (DFF) with variation in supply voltage over a wide range of particle linear energy transfer (LET). An empirical model for predicting the SEU cross section as a function of supply voltage based on experimental data has been developed and verified. The results are consistent with low-LET particle irradiation findings from previous works that have indicated a strong exponential increase in SEU cross section with supply voltage scaling for FinFET technologies. Furthermore, this paper reveals the impact of supply voltage variations on a sensitive area for high-LET particle irradiation. The increase in cross section from nominal (0.8 V) to a specific reduced supply voltage for high-LET particle irradiation is constant and has been observed through experimental results across the high-LET particle spectrum. The 3-D TCAD simulations are used to characterize sensitive area affecting high-LET supply voltage-dependent SEU cross sections in the FinFET technology. The developed model will allow circuit designers to predict changes in the SEU cross section due to supply voltage variation for the 14-/16-nm technology node without extensive testing.