Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes
Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes
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DOI：
10.1039/c3tc31306a
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发表时间：
2013-10
影响因子：
6.4
通讯作者：
D. Qi;Hanhui Liu;Wei Gao;Qinqin Sun;Songyan Chen;Wei Huang;Cheng Li;H. Lai
中科院分区：
文献类型：
--
作者：
D. Qi;Hanhui Liu;Wei Gao;Qinqin Sun;Songyan Chen;Wei Huang;Cheng Li;H. Lai
报道了利用激光诱导SiGe岛作为模板，通过氩离子束刻蚀（IBE）制备SiGe岛/SiGe/Si异质纳米线阵列。首先，用脉冲激光辐照非晶Ge薄膜在Si衬底上制备了平均深宽比为0.96的单晶SiGe岛。值得注意的是，这些SiGe岛可以作为掩模，并且可以通过Ar IBE制备均匀取向的SiGe岛/SiGe/Si纳米线。此外，异质纳米线的直径可以很好地控制的SiGe岛的大小由脉冲激光在结晶过程中的能量密度决定。我们的实验展示了独特的非光刻自掩模方法，并展示了大规模生产的SiGe岛/SiGe/Si异质纳米线阵列，可能会发现在纳米器件中的应用。
We report the synthesis of SiGe island/SiGe/Si hetero-nanowire arrays using laser-induced SiGe islands as templates followed by Ar ion beam etching (IBE). Firstly, single crystal SiGe islands with an average aspect ratio of 0.96 are prepared by pulse laser irradiation of amorphous Ge film on Si substrate. It is interesting to note that these SiGe islands can serve as masks, and uniformly orientated SiGe island/SiGe/Si nanowires can be fabricated by Ar IBE. Moreover, the diameters of the hetero-nanowires can be well-controlled by the size of the SiGe islands determined by the energy density of the pulse laser during the crystallization. Our experiments show the unique nonlithographic self-mask method and demonstrate the mass production of SiGe island/SiGe/Si hetero-nanowire arrays which may find applications in nanodevices.