Estimation of carrier capture time of quantum‐well lasers by spontaneous emission spectra
Estimation of carrier capture time of quantum‐well lasers by spontaneous emission spectra
复制标题
通过自发发射光谱估计量子阱激光器的载流子捕获时间
DOI：
10.1063/1.108176
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发表时间：
1992
影响因子：
4
通讯作者：
M. Asada
中科院分区：
文献类型：
--
作者：
H. Hirayama;J. Yoshida;Y. Miyake;M. Asada
通过测量光限制层的自发发射来估计单独限制异质结构单量子阱激光器的载流子捕获时间，由于阱的载流子捕获时间有限，自发发射甚至会随着电流的增加而增加，甚至高于激光阈值。通过将理论分析与测量进行拟合，发现空穴捕获时间是自发发射增加的主要因素，对于 GaInAs/GaInAsP/InP 量子阱激光器，估计为 0.2–0.25 ps。对于多量子阱激光器，还获得了 0.1–0.2 ps 的额外传输时间。看来载流子捕获时间的有限性不仅影响阈值电流，而且通过光限制层中载流子的吸收损耗影响高功率操作中的微分量子效率。
Carrier capture time was estimated for separate confinement heterostructure single quantum‐well lasers by measuring the spontaneous emission from the optical confinement layers which increases with current even above the laser threshold due to finite carrier capture time of the well. By fitting theoretical analysis to the measurement, hole capture time was found to be the dominant factor for the spontaneous emission increase, and was estimated as 0.2–0.25 ps for GaInAs/GaInAsP/InP quantum well lasers. Additional transport time of 0.1–0.2 ps across the barrier was also obtained for multiquantum well lasers. It appears that the finiteness of carrier capture time affects not only the threshold current but also the differential quantum efficiency in high power operation through the absorption loss by the carriers in the optical confinement layers.