Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond
Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond
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DOI：
10.1016/j.diamond.2014.10.004
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发表时间：
2015-04-01
影响因子：
4.1
通讯作者：
Koide, Yasuo
中科院分区：
文献类型：
--
作者：
Liu, Jiangwei;Liao, Meiyong;Koide, Yasuo
用原子层沉积(ALD)技术在氢化金刚石(H-金刚石)外延层上沉积了HfO2/Al_2O_3多层膜。研究了AlD-HfO2/Al_2O_3/H-金刚石金属绝缘体半导体(MIS)二极管的电学性能，并与单一的AlD-Al_2O_3/H-金刚石和AlD-HfO_2/H-金刚石MIS二极管进行了比较。AlD-HfO2/Al_2O_3/H-金刚石MIS二极管的漏电流密度小于3.8×10~(-8)A·cm~(-2)，电场范围为-1.6~1.0 MV·cm~(-1)。AlD-HfO2/Al_2O_3多层膜的介电常数大于单一AlD-Al_2O_3多层膜的介电常数。ALDHfO(2)/Al_2O_3/H-金刚石结构的固定电荷密度远低于单一的AlD-HfO_2/H-金刚石结构。研究了AlD-HfO2/Al_2O_3/H-金刚石MIS场效应晶体管的电学特性。其源漏电流和非本征跨导最大值分别为-42.1 mA.mm(-1)和6.2+/-0.1mS.mm(-1)。测得H-钻石沟道层的有效迁移率为38.2+/-0.5 cm(2)·V-1.s(-1)。(C)2014年爱思唯尔BM。版权所有。
A HfO2/Al2O3 multilayer has been deposited by an atomic layer deposition (ALD) technique on a hydrogenated-diamond (H-diamond) epitaxial layer. Electrical properties of the ALD-HfO2/Al2O3/H-diamond metal-insulator-semiconductor (MIS) diode have been investigated to compare with those of the single ALD-Al2O3/H-diamond and ALD-HfO2/H-diamond MIS diodes. The leakage current density for the ALD-HfO2/Al2O3/H-diamond MIS diode is smaller than 3.8 x 10(-8) A.cm(-2) with electric field ranging from -1.6 to 1.0 MV.cm(-1). The dielectric constant for the ALD-HfO2/Al2O3 multilayer is larger than that for the single ALD-Al2O3. The fixed charge density in the ALDHfO(2)/Al2O3/H-diamond structure is much lower than that in the single ALD-HfO2/H-diamond structure. The electrical properties of the ALD-HfO2/Al2O3/H-diamond MIS field effect transistor have also been investigated. The source-drain current and extrinsic transconductance maxima are -42.1 mA.mm(-1) and 6.2 +/- 0.1 mS.mm(-1), respectively. The effective mobility for the H-diamond channel layer has been determined to be 38.2 +/- 0.5 cm(2).V-1.s(-1). (C) 2014 Elsevier BM. All rights reserved.