NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS
NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS
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DOI：
10.1063/1.113087
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发表时间：
1994-07-04
影响因子：
4
通讯作者：
ROGERS, TJ
中科院分区：
文献类型：
--
作者：
HUFFAKER, DL;DEPPE, DG;ROGERS, TJ
Data are presented characterizing a new process for fabrication of vertical-cavity surface-emitting lasers based on the selective conversion of high Al composition epitaxial AlGaAs to a stable native oxide using ''wet oxidation.'' The native oxide is used to form a ring contact to the laser active region. The resulting laser active regions have dimensions of 8, 4, and 2 mum. The lowest threshold laser is achieved with the 8-mum active region, with a minimum threshold current of 225-muA continuous wave at room temperature.
