Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling
Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling
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DOI：
10.1109/tmag.2015.2443124
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发表时间：
2015-11-01
影响因子：
2.1
通讯作者：
Wang, Kang L.
中科院分区：
文献类型：
--
作者：
Amiri, Pedram Khalili;Alzate, Juan G.;Wang, Kang L.
本文综述了近年来基于磁场控制写入技术的磁电RAM（梅拉姆）的研究进展。梅拉姆使用隧道磁阻效应在两端存储器元件中进行读出，类似于其他类型的磁性RAM。然而，信息的写入是通过MgO隧道势垒和基于CoFeB的自由层的界面处的磁各向异性（VCMA）的电压控制来执行的，这与电流控制（例如，自旋转移扭矩或自旋轨道扭矩）机制。我们目前的结果，电压诱导开关的MTJ在谐振（旋进）和热激活制度，这表明快速（
We review the recent progress in the development of magnetoelectric RAM (MeRAM) based on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the tunneling magnetoresistance effect for readout in a two-terminal memory element, similar to other types of magnetic RAM. However, the writing of information is performed by voltage control of magnetic anisotropy (VCMA) at the interface of an MgO tunnel barrier and the CoFeB-based free layer, as opposed to current-controlled (e.g., spin-transfer torque or spin-orbit torque) mechanisms. We present results on voltage-induced switching of MTJs in both resonant (precessional) and thermally activated regimes, which demonstrate fast (