Fabrication Issues of 4H-SiC Static Induction Transistors
Fabrication Issues of 4H-SiC Static Induction Transistors
复制标题
4H-SiC 静态感应晶体管的制造问题
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
K. Zekentes
中科院分区：
文献类型：
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作者：
A. Stavrinidis;G. Konstantinidis;M. Kayambaki;F. Cayrel;D. Alquier;Zhuo Gao;K. Zekentes
用于制造 4H-SiC 静电感应晶体管 (SIT) 的工艺技术已经开发出来。已经采用了传统的接触式UV光刻和自对准技术。快速热退火 (RTA) 后的铝外扩散已被确定为反向泄漏增加和栅源结提前正向导通的原因。所制造的晶体管表现出 2mΩ·cm2 范围内的特定 RON 值和 80 V 关断电压。
The process technology for the fabrication of 4H-SiC Static Induction Transistors (SITs) has been developed. Conventional contact UV lithography and self-aligned techniques have been employed. Al-outdiffusion following Rapid Thermal Annealing (RTA) has been determined as the cause for the increased reverse leakage and early forward turn-on of the gate-source junction. The fabricated transistors, exhibited a specific RON value in the region of 2mΩ•cm2 and 80 V turn-off voltage.