Cathodoluminescence from Thin Film Zn2GeO4 : Mn Phosphor Grown by Pulsed Laser Deposition
Cathodoluminescence from Thin Film Zn2GeO4 : Mn Phosphor Grown by Pulsed Laser Deposition
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DOI：
10.1149/1.1767159
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发表时间：
2004-08
影响因子：
3.9
通讯作者：
L. Williams;D. Norton;J. Budai;P. Holloway
中科院分区：
文献类型：
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作者：
L. Williams;D. Norton;J. Budai;P. Holloway
研究了脉冲激光沉积法制备的Zn2GeO4：Mn薄膜荧光粉的低压阴极发光特性。研究了衬底加热温度(600-750℃)和衬底类型(氧化镁、硅和氧化钇稳定的氧化锆)对阴极发光性能的影响。当衬底温度为650、700或750°C时，在540 nm处观察到特征绿光发射峰，而在衬底温度为600°C时，发射波长红移至650 nm，这归因于激活剂离子状态从Mn2+向Mn4+的转变。虽然光谱位置与衬底类型无关，但阴极发光峰的相对强度随衬底类型和衬底温度的不同而不同。在600℃的衬底温度下，薄膜的晶体结构为多晶和非晶态混合。然而，在650-750℃的衬底温度范围内，薄膜只是多晶的，其结晶度与化学发光强度相关。
Low voltage cathodoluminescent (CL) characteristics of Zn 2 GeO 4 : Mn thin-film phosphors grown by pulsed laser deposition were investigated. The effects of substrate heating (600-750°C) and substrate type (MgO, Si, and yttria-stabilized zirconia) on the cathodoluminescent properties were studied. A characteristic green emission peak at 540 nm was observed at substrate temperatures of 650, 700, or 750°C. However, the emission was red shifted to 650 nm for a substrate temperature of 600°C. The red shift in emission wavelengths from 540 to 650 nm was attributed to a change in ionic state of the activator from Mn 2+ to Mn 4+ . While the spectral position was independent of substrate type, the relative intensities of the cathodoluminescent emission peak varied with both substrate type as well as substrate temperature. At a substrate temperature of 600°C, the crystal structure of the film was mixed polycrystalline and amorphous. However, at substrate temperatures ranging from 650-750°C, the films were only polycrystalline with varying degrees of crystallinity that correlated with the CL intensity.