A new silicon detector for microdosimetry applications in proton therapy
A new silicon detector for microdosimetry applications in proton therapy
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用于质子治疗中微剂量测定应用的新型硅探测器
DOI：
10.1109/nssmic.1999.842503
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Y. Hayakawa
中科院分区：
文献类型：
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作者：
A. Rosenfeld;P. Bradley;I. Cornelius;G. Kaplan;B. Allen;J. Flanz;M. Goitein;A. V. Meerbeeck;J. Schubert;J. Bailey;Y. Takada;A. Maruhashi;Y. Hayakawa
研制了一种灵敏深度为10 μ m的硅绝缘体二极管阵列，用于质子治疗的微剂量测量。该检测器耦合到一个辐射硬电荷敏感放大器的探针组件能够测量LET下降到1.2 keV//spl mu/m。该设备已在两个质子治疗中心成功测试：波士顿的230 MeV东北质子治疗中心和日本筑波的250 MeV质子医学研究中心。与比例气体计数器相比，该装置提供了更高的空间分辨率，特别是在质子布拉格峰周围的临界高剂量区域。由于其小的横截面积（0.04 cm/sup 2/），也可以在具有短的高强度光束的设施中进行测量。
A silicon-on-insulator diode array with a sensitive depth of 10 microns has been developed for microdosimetry in proton therapy. The detector was coupled to a radiation-hard charge sensitive amplifier with the probe assembly capable of measuring a LET down to 1.2 keV//spl mu/m. The device has been successfully tested at two proton therapy centers: The 230 MeV Northeastern Proton Therapy Center, Boston and the 250 MeV Proton Medical Research Center at Tsukuba, Japan. The device offers much improved spatial resolution compared with a proportional gas counter particularly in the critical high dose region around the proton Bragg peak. Due to its small cross-sectional area (0.04 cm/sup 2/) measurements may also be made in facilities with short high intensity beams.