Near-Zero Negative Real Permittivity in Far Ultraviolet: Extending Plasmonics and Photonics with B1-MoN x
Near-Zero Negative Real Permittivity in Far Ultraviolet: Extending Plasmonics and Photonics with B1-MoN x
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远紫外线中近零负实介电常数：用 B1-MoN x 扩展等离激元学和光子学
DOI：
10.1021/acs.jpcc.9b04141
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Gall, Daniel
中科院分区：
文献类型：
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作者：
Kassavetis, Spyros;Ozsdolay, Brian D.;Kalfagiannis, Nikolaos;Habib, Adela;Tortai, Jean-Hervé;Kerdsongpanya, Sit;Sundararaman, Ravishankar;Stchakovsky, Michel;Bellas, Dimitris V.;Gall, Daniel
CMOS兼容的耐火导体正在成为将新概念推进到真实的实用等离子体技术中的材料。从可用的材料托盘，那些负的真实的介电常数在非常短的波长是非常罕见的;重要的是，他们是容易氧化暴露在远紫外线辐射和非耐火材料。本文报道了亚化学计量立方MoN（B1-MoNx）薄膜在155 nm波长下的电阻率低至250 μΩ cm，介电常数为负真实的，具有无与伦比的化学和热稳定性。时域差分计算表明，B1-MoNx在UV（100-200 nm）中比除Al之外的任何其他已知材料更深地作为活性等离子体元件，同时比任何其他UV等离子体导体更稳定和丰富得多。出乎意料的是，氮空位促进了B1-MoNxis的独特光学性能，从而改变了人们对缺陷在等离子体材料中作用的普遍看法。
CMOS-compatible, refractory conductors are emerging as the materials that will advance novel concepts into real, practical plasmonic technologies. From the available pallet of materials, those with negative real permittivity at very short wavelengths are extremely rare; importantly, they are vulnerable to oxidation—upon exposure to far-UV radiation—and nonrefractory. Epitaxial, substoichiometric, cubic MoN (B1-MoNx) films exhibit resistivity as low as 250 μΩ cm and negative real permittivity for experimental wavelengths as short as 155 nm, accompanied with unparalleled chemical and thermal stabilities, which are reported herein. Finite-difference time domain calculations suggest that B1-MoNxoperates as an active plasmonic element deeper in the UV (100–200 nm) than any other known material, apart from Al, while being by far more stable and abundant than any other UV plasmonic conductor. Unexpectedly, the unique optical performance of B1-MoNxis promoted by nitrogen vacancies, thus changing the common perception on the role of defects in plasmonic materials.