Discriminating bulk versus interface shunts in organic solar cells by advanced imaging techniques
Discriminating bulk versus interface shunts in organic solar cells by advanced imaging techniques
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DOI：
10.1002/pip.3121
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发表时间：
2019-03
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通讯作者：
André Karl;A. Osvet;A. Vetter;Philipp Maisch;Ning Li;H. Egelhaaf;C. Brabec
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文献类型：
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作者：
André Karl;A. Osvet;A. Vetter;Philipp Maisch;Ning Li;H. Egelhaaf;C. Brabec
将有机光伏从实验室规模扩大到工业规模时的一个重要方面是质量控制。锁定热成像或发光成像等成熟的成像技术经常用于此目的。虽然这些技术允许横向检测缺陷，但它们无法提供有关 OPV 堆栈中缺陷的垂直位置的信息。在这里，我们提出了一种克服这一限制的方法。在器件制造过程中，采用飞秒激光器选择性地将明确的人工校准缺陷引入倒置 P3HT:PCBM 体异质结电池的界面和体活性层中。然后使用 J-V 分析和几种无损成像方法（暗锁热成像、光致发光和电致发光成像）对有缺陷的细胞进行表征。不同成像方法中每种缺陷的不同响应使我们能够独特地区分体缺陷和界面缺陷。这允许在大多数受控条件下研究表面重组。
An important aspect when upscaling organic photovoltaics from laboratory to industrial scale is quality control. Established imaging techniques like lock‐in thermography or luminescence imaging are frequently used for this purpose. While these techniques allow for the lateral detection of defects, they cannot provide information on the vertical position of the defect in the OPV stack. Here, we present an approach to overcome this limitation. A femtosecond‐laser is deployed to introduce well‐defined artificial calibration defects selectively into both the interface and the bulk active layer of inverted P3HT:PCBM bulk heterojunction cells during device fabrication. The defective cells are then characterized using J‐V analysis and several nondestructive imaging methods (dark lock‐in thermography, photoluminescence, and electroluminescence imaging). The distinct response for each defect in the different imaging methods enables us to uniquely distinguish between bulk and interface defects. This allows to study surface recombination under most controlled conditions.