Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope
Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope
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扫描隧道显微镜诱导的AlGaAs/GaAs多量子阱的发光光谱
DOI：
10.1063/1.122200
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
H. Ohno
中科院分区：
文献类型：
--
作者：
T. Tsuruoka;Y. Ohizumi;S. Ushioda;Y. Ohno;H. Ohno
研究了p-Al_（0. 4）Ga_（0. 6）As/p-GaAs多量子威尔斯阱的扫描隧道显微镜光发射谱。注入电流水平保持低至0.1-0.5 nA，以确保样品不被隧穿电流损坏。这是通常用于拍摄STM图像的电流电平。随着阱宽的减小，发射峰能量向高能侧移动。在光致发光（PL）光谱中也观察到了相应的峰位移行为。从STM-LE和PL谱的比较，我们发现，虽然有一个不同的激发过程中，最终的复合过程是相同的，在这两种情况下。
We have investigated the scanning-tunneling-microscope light emission (STM-LE) spectra of p-Al0.4Ga0.6As/p-GaAs multiquantum wells. The injection current level was kept as low as 0.1–0.5 nA to ensure that the sample is not damaged by the tunneling current. This is the current level ordinarily used for taking STM images. The peak energy of the emission shifts to the high energy side with decreasing well widths. A corresponding peak shift behavior was also observed in the photoluminescence (PL) spectra for the same samples. From comparisons of the STM-LE and the PL spectra, we find that although there is a difference in the excitation process, the final recombination process is identical in both cases.