Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance
Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance
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DOI：
10.1063/1.2753671
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发表时间：
2007-07-15
影响因子：
3.2
通讯作者：
Saiki, Koichiro
中科院分区：
文献类型：
--
作者：
Guo, Dong;Miyadera, Tetsuhiko;Saiki, Koichiro
为了研究多晶并五苯薄膜晶体管（TFT）中的电荷输运，分析了TFT的栅偏压和温度场效应迁移率和电导。由于加热和冷却都可以明显改变薄膜的形貌，因此采用了相对较窄的温度范围，以排除结构变化对器件特性的可能影响。迁移率和电导值均随着栅极偏置而增加，并表现出热激活的阿伦尼乌斯式行为，而阈值电压则随着温度而下降。几个模型进行了比较，发现，观察只能很好地解释了一个多陷阱模型，这表明温度和栅极偏置的依赖性应归因于增加的自由载流子密度。通过场效应迁移率和场效应电导数据计算了带隙中的陷阱态密度。结果揭示了一个可能的场效应迁移率远高于目前的记录在多晶并五苯TFT。(C)2007年，美国物理学会。
The gate bias and temperature dependent field-effect mobility and conductance of a polycrystalline pentacene thin film transistor (TFT) were analyzed to study the charge transport in the material. Since both heating and cooling can obviously change the film morphology, a relatively narrow temperature range was adopted to rule out the possible influence of structure variation on the device characterization. Both mobility and conductance values increased with the gate bias and showed a thermally activated Arrhenius-like behavior, while the threshold voltage deceased with temperature. Several models were compared, and it was found that the observations could only be well interpreted by a multiple trapping model, which suggests that the temperature and gate bias dependences should be attributed to the increased free charge carrier density. The density of trap states in the band gap was evaluated by the field-effect mobility as well as the field-effect conductance data. The results disclose a possible field-effect mobility much higher than the present record in a polycrystalline pentacene TFT. (C) 2007 American Institute of Physics.