Fano resonances due to coupled magnetoexciton and continuum states in bulk semiconductors.
Fano resonances due to coupled magnetoexciton and continuum states in bulk semiconductors.
复制标题
由于块状半导体中磁激子和连续态的耦合而产生法诺共振。
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
Chemla
中科院分区：
文献类型：
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作者：
Glutsch;Siegner;Mycek;Chemla
我们在磁场下GaAs的线性吸收实验中观察到Fano共振。在磁场中的块状半导体中，Fano干涉是高阶磁激子和能量简并的一维连续态耦合的结果。我们表明，这些实验结果可以描述的有效质量近似的双带半导体模型。对线性磁吸收的数值计算表明，磁激子和连续态之间的耦合是由于库仑相互作用。
We have observed Fano resonances in linear absorption experiments on GaAs under a magnetic field. In a bulk semiconductor in a magnetic field, Fano interference is the result of the coupling of higher-order magnetoexcitons and energetically degenerate one-dimensional continuum states. We show that these experimental findings can be described by the model of a two-band semiconductor in the effective-mass approximation. Numerical calculations of the linear magnetoabsorption are presented that demonstrate that the coupling between magnetoexcitons and continuum states is due to Coulomb interaction.