Dual-band GaN HEMT power amplifier using resonators in matching networks
Dual-band GaN HEMT power amplifier using resonators in matching networks
复制标题
在匹配网络中使用谐振器的双频段 GaN HEMT 功率放大器
DOI：
10.1109/wamicon.2011.5872884
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Chan
中科院分区：
文献类型：
--
作者：
Zhebin Wang;Chan
本文提出了一种利用微带线谐振器设计双频GaN HEMT功率放大器的新方法。在输入和输出匹配网络上，我们在串联微带线和开路短节之间增加了并联谐振器，实现了双频工作。利用我们提出的结构，我们可以使用传统的L结构来为每个工作频率设计匹配网络，从而使设计变得更加容易。通过使用一个晶体管而不需要任何可调谐的电子元件或开关，设计并制作了一种新型的工作在1.5 GHz和2.4 GHz的双频AB类功率放大器来演示我们提出的简单方法。采用谐振腔双频匹配网络，在1.5 GHz和2.4 GHz下分别获得了40.3dBm和39.05dBm的输出功率，功率附加效率(PAE)分别为55.63%和40.25%。
In this paper, we employ a novel method by using resonators with microstrip lines to design a dual-band GaN HEMT power amplifier. At both input and output matching networks, we add parallel resonators between series microstrip lines and open-circuited stubs to realize the dual-band operation. With our proposed structure, we can use the conventional L-type structure to design matching network for each operation frequency so that the design is easier. By using just one transistor without any tunable electronic element or switch, a novel dual-band class AB power amplifier working at 1.5 GHz and 2.4 GHz is designed and fabricated to demonstrate our proposed simple method. With dual-band matching networks using resonators, the experimental results show the output power 40.3 dBm and 39.05 dBm with power added efficiency (PAE) 55.63% and 40.25% at 1.5 GHz and 2.4 GHz, respectively.