Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure
Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure
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DOI：
10.1116/1.3670961
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
M. Mousa;C. Oldham;J. Jur;G. Parsons
中科院分区：
文献类型：
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作者：
M. Mousa;C. Oldham;J. Jur;G. Parsons
在大气压力下，在Al 2 O3和ZnO的原子层沉积（ALD）期间，作为温度的函数的每个循环的生长非常紧密地遵循在典型的（102托）工艺压力下测量的趋势。然而，发现在较高压力下的总生长速率几乎是2倍，并且可以通过控制生长表面附近的气体速度来调节生长增加的幅度。在高压下的生长增加在T 150 °C下与工艺温度大致无关，特别是对于Al 2 O3。在760托和T < 150 °C下测量的相对高的生长/循环表明在水吹扫步骤之后过量的物理吸附水保留在氧化铝或氧化锌表面上。增加生长区中的气体速度降低了生长速率，这与更有效地去除过量水一致。为了更好地理解所观察到的趋势，我们提出了边界层的解析表达式…
The growth per cycle as a function of temperature during atomic layer deposition (ALD) of Al2O3 and ZnO at atmospheric pressure follows very closely the trend measured at typical (∼2 Torr) process pressure. However, the overall growth rate is found to be nearly 2 × larger at higher pressure and the magnitude of the growth increase can be adjusted by controlling the gas velocity near the growth surface. The growth increase at high pressure is approximately independent of process temperature at T 150 °C, especially for Al2O3. The relatively high growth/cycle measured at 760 Torr and T < 150 °C suggests that excess physisorbed water remains on the alumina or zinc oxide surface after the water purge step. Increasing the gas velocity in the growth zone reduces the growth rate, consistent with more efficient removal of excess water. To better understand the observed trends, we present analytical expressions for the boundary layer...