Stracture - Thermal Property Relationships of Polysilsesquioxanes for Thermal Insulation Materials

Stracture - Thermal Property Relationships of Polysilsesquioxanes for Thermal Insulation Materials
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隔热材料用聚倍半硅氧烷的结构-热性能关系

DOI:
10.1021/acsapm.1c01812
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发表时间:
2022
影响因子:
5
通讯作者:
Ohshita Joji
Ohshita Joji
中科院分区:
化学2区
文献类型:
--
作者:
Hamada Takashi;Goto Taku;Takase Sakino;Okada Kenta;Uedono Akira;Ohshita Joji

文献摘要

相似文献

为了使聚硅氧烷(PSQ)作为高效隔热材料的有机-无机杂化材料得到更好的发展,对PSQ凝胶膜的结构-热性能关系的研究至关重要。为此,采用溶胶-凝胶法制备了PSQ,研究了残余烷氧基和取代基对PSQ独立凝胶膜隔热性能的影响。具有乙氧基和异丁氧基的聚甲基硅氧烷制备的凝胶膜的热扩散系数随着这些残余基的增加而增加。然而,与乙氧基相比,体积较大的异丁氧基降低了相应的聚甲基硅氧烷凝胶膜的热扩散率。残余烷氧基的数量对PSQ薄膜的保温性能的影响主要是由于其体积较大。与聚甲基硅氧烷凝胶膜相比,与硅原子键合的苯基的存在明显降低了聚苯基硅氧烷凝胶膜的热扩散率。同时,聚苯基硅氧烷凝胶膜的热稳定性显著高于聚甲基硅氧烷凝胶膜。综上所述,硅原子上的有机取代基影响了PSQ薄膜的隔热性能和热稳定性。
For the development of polysilsesquioxanes (PSQs) as organic–inorganic hybrid materials for efficient thermal insulators, gaining a better understanding on the structure–thermal property relationship of PSQ gel films is essential. With this aim, PSQs were prepared via the sol–gel method to investigate the influence of residual alkoxy groups and substituents on the thermal insulation property of PSQ freestanding gel films. The thermal diffusivities of gel films prepared from polymethylsilsesquioxanes having ethoxy and isobutoxy groups increased with increasing the amount of these residual groups. However, compared with the ethoxy group, the bulky isobutoxy group decreased the thermal diffusivity of the corresponding polymethylsilsesquioxanes gel films. The thermal insulation property of the PSQ films was affected by the amount of residual alkoxy groups mainly due to their bulkiness. The presence of a phenyl group bonded to the silicon atom apparently decreased the thermal diffusivity of a gel film prepared from polyphenylsilsesquioxane compared with that of a polymethylsilsesquioxane gel film. Meanwhile, the thermal stability of the polyphenylsilsesquioxane gel film was significantly higher than that of polymethylsilsesquioxane gel film. Overall, the organic substituents on the silicon atom affected the thermal insulation property and thermal stability of PSQ films.