Growth of (111) One-Axis-Oriented Bi(Mg1/2Ti1/2)O3 Films on (100)Si Substrates
Growth of (111) One-Axis-Oriented Bi(Mg1/2Ti1/2)O3 Films on (100)Si Substrates
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DOI：
10.7567/jjap.52.04ch09
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发表时间：
2013-03
影响因子：
1.5
通讯作者：
T. Oikawa;S. Yasui;Takayuki Watanabe;K. Ishii;Yoshitaka Ehara;H. Yabuta;Takeshi Kobayashi;T. Fukui;K. Miura;H. Funakubo
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文献类型：
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作者：
T. Oikawa;S. Yasui;Takayuki Watanabe;K. Ishii;Yoshitaka Ehara;H. Yabuta;Takeshi Kobayashi;T. Fukui;K. Miura;H. Funakubo
在(111)C取向的(111)取向的(111)Pt/TiO2/SiO_2/(100)Si衬底上制备了高压钙钛矿结构的Bi(Mg1/2Ti1/2)O_3薄膜。钙钛矿结构的Bi(Mg1/2Ti1/2)O_3薄膜由于其组成颗粒是在(111)C取向的钙钛矿结构的SrRuO_3薄膜上外延生长的，所以具有(111)单轴取向。在600kV/cm的外加电场下测得的剩余极化约为30µC/cm2，剩余压电常数约为40 pm/V。在(111)取向的单轴取向的Bi(Mg1/2Ti1/2)O3薄膜中，从室温到350℃没有观察到明显的相变，表明该薄膜的居里温度在350℃以上。
Films of a high-pressure perovskite phase, Bi(Mg1/2Ti1/2)O3, were prepared on (111)c-oriented SuRuO3-coated (111)Pt/TiO2/SiO2/(100)Si substrates. The perovskite Bi(Mg1/2Ti1/2)O3 films had a (111) one-axis orientation, because their constituent grains were epitaxially grown on (111)c-oriented perovskite SrRuO3 ones. The remanent polarization and piezoelectric constant measured at an applied electric field of 600 kV/cm were about 30 µC/cm2 and 40 pm/V, respectively. A remarkable phase transition was not observed from room temperature to 350 °C in a (111) one-axis-oriented Bi(Mg1/2Ti1/2)O3 film, suggesting that the Curie temperature of this film is above 350 °C.