NARROW LINE SEMICONDUCTOR-LASER USING FIBER GRATING
NARROW LINE SEMICONDUCTOR-LASER USING FIBER GRATING
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DOI：
10.1049/el:19910696
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发表时间：
1991-06-20
影响因子：
1.1
通讯作者：
CAMERON, KH
中科院分区：
文献类型：
--
作者：
BIRD, DM;ARMITAGE, JR;CAMERON, KH
一种窄线宽、低啁啾、波长可选择、封装的DFB结构已被开发出来，它采用了光纤尾纤中的光纤反射光栅。 封装器件的波长可以通过适当选择耦合到1.55 μ m BH激光器的带涂层端面的光纤光栅来确定。 线宽小于50 kHz，边模抑制大于30 dB，啁啾小于0.5 MHz，调制速率为1.2 Gbit/s。
A narrow linewidth, low chirp, wavelength selectable, packaged alternative to current DFB structures has been developed which employs a fibre reflection grating incorporated in the fibre pigtail. The wavelength of the packaged device can be determined by the appropriate choice of fibre grating coupled to the antireflection coated facet of a 1.55-mu-m BH laser. Linewidths of less than 50 kHz, sidemode suppression of more than 30 dB and chirp when modulated at 1.2 Gbit/s of < 0.5 MHz have been demonstrated.