Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots
Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots
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DOI：
10.1103/physrevb.74.035334
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发表时间：
2006-07-01
影响因子：
3.7
通讯作者：
Jahnke, F.
中科院分区：
文献类型：
--
作者：
Lorke, M.;Chow, W. W.;Jahnke, F.
本文用量子动力学理论研究了半导体量子点的光学增益行为，用重整化准粒子态处理载流子-载流子和载流子-声子散射。对于非均匀加宽的样品，我们发现增益的激发依赖性基本上类似于量子阱和体系统。然而，对于高质量的样品，我们的理论预测随着载流子密度的增加峰值增益降低的可能性。这种异常可以归因于状态填充和退相之间的微妙平衡。
Optical gain behavior of semiconductor quantum dots is studied within a quantum-kinetic theory, with carrier-carrier and carrier-phonon scattering treated using renormalized quasiparticle states. For inhomogeneously broadened samples, we found the excitation dependence of gain to be basically similar to quantum-well and bulk systems. However, for a high quality sample, our theory predicts the possibility of a decreasing peak gain with increasing carrier density. This anomaly can be attributed to the delicate balance between state filling and dephasing.