Step erosion during nucleation of InAs/GaAs(001) quantum dots

Step erosion during nucleation of InAs/GaAs(001) quantum dots
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DOI：
10.1063/1.1946181
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发表时间：
2005-06-13
期刊：
APPLIED PHYSICS LETTERS
影响因子：
4
通讯作者：
Balzarotti, A
Balzarotti, A
中科院分区：
物理与天体物理2区
文献类型：
--
作者：
Placidi, E;Arciprete, F;Balzarotti, A

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我们通过原子力显微镜研究了 InAs/GaAs(001) 量子点随沉积 InAs 的变化的完整演变。发现了成核到阶梯边缘的量子点阶梯侵蚀的直接证据，并提供了侵蚀体积的估计。通过研究量子点体积与 InAs 覆盖率的函数关系，我们发现润湿层的贡献仅限于二维和三维过渡周围的狭窄覆盖范围内。 (c) 2005 年美国物理研究所。
We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.